AOTF454L 150v n-channel mosfet v ds i d (at v gs =10v) 13a r ds(on) (at v gs =10v) < 94m ? r ds(on) (at v gs =7v) < 110m ? symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2.4 58 3 w t a =70c 41 1.3 t a =25c 2.1 16 t c =100c a t a =25c i dsm a t a =70c i d 13 8 t c =25c t c =100c avalanche current c 2.5 continuous drain current 1.3 3 avalanche energy l=0.1mh c a 5 drain-source voltage 150 v 20 gate-source voltage 40 pulsed drain current c continuous drain current the AOTF454L combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) .this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 150v mj parameter typ max t c =25c power dissipation b p d w power dissipation a p dsm units junction and storage temperature range -55 to 150 c thermal characteristics maximum junction-to-ambient a c/w r ja 10 48.5 12 g d s to220f www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 150 v v ds =150v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 3.4 4 4.6 v i d(on) 40 a 75.5 94 t j =125c 151 188 84 110 m ? g fs 20 s v sd 0.72 1 v i s 45 a c iss 655 820 985 pf c oss 50 70 90 pf c rss 13 22 31 pf r g 0.7 1.4 2.1 ? q g (10v) 10 15 20 nc q gs 4nc q gd 4.4 nc t d(on) 10.5 ns t r 5.5 ns t d(off) 14.5 ns t f 3ns t rr 20 32.5 45 ns q rr 160 230 300 nc drain-source breakdown voltage i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =10a on state drain current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions switching parameters maximum body-diode continuous current input capacitance output capacitance reverse transfer capacitance v gs =0v, v ds =75v, f=1mhz i dss a v ds =v gs i d =250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current gate resistance v gs =0v, v ds =0v, f=1mhz i s =1a,v gs =0v v ds =5v, i d =10a v gs =7v, i d =10a forward transconductance diode forward voltage dynamic parameters r ds(on) static drain-source on-resistance m ? body diode reverse recovery charge i f =10a, di/dt=500a/ s turn-off delaytime body diode reverse recovery time turn-off fall time v gs =10v, v ds =75v, r l =7.5 ? , r gen =3 ? turn-on delaytime v gs =10v, v ds =75v, i d =10a gate source charge gate drain charge i f =10a, di/dt=500a/ s turn-on rise time total gate charge a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. www.freescale.net.cn 2/6 AOTF454L 150v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 5 10 15 20 2345678 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 60 70 80 90 100 110 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =7v i d =10a v gs =10v i d =10a 50 70 90 110 130 150 170 190 45678910 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =7v v gs =10v i d =10a 25c 125c 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =5.5v 6v 10v 6.5v 7v www.freescale.net.cn 3/6 AOTF454L 150v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 2 4 6 8 10 03691215 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 0 15 30 45 60 75 90 105 120 135 150 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =75v i d =10a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 1 00 s r jc =3c/w www.freescale.net.cn 4/6 AOTF454L 150v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 5 10 15 20 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) 0 100 200 300 400 500 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r ja =58c/w 1 10 1 10 100 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c www.freescale.net.cn 5/6 AOTF454L 150v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AOTF454L 150v n-channel mosfet
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